IRF6716MTR1PBF International Rectifier, IRF6716MTR1PBF Datasheet - Page 8
![MOSFET N-CH 25V 39A DIRECTFET](/photos/5/53/55367/irf6716mtr1pbf_sml.jpg)
IRF6716MTR1PBF
Manufacturer Part Number
IRF6716MTR1PBF
Description
MOSFET N-CH 25V 39A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6716MTR1PBF.pdf
(9 pages)
Specifications of IRF6716MTR1PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.6 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
2.4V @ 100µA
Gate Charge (qg) @ Vgs
59nC @ 4.5V
Input Capacitance (ciss) @ Vds
5150pF @ 13V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.6 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
39 A
Power Dissipation
78 W
Gate Charge Qg
39 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6716MTR1PBF
IRF6716MTR1PBFTR
IRF6716MTR1PBFTR
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
1.38
MIN
6.25
3.85
0.35
0.68
0.68
0.80
0.38
0.88
2.28
0.616
0.020
0.08
4.80
METRIC
DIMENSIONS
1.42
1.01
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.84
0.42
2.41
0.676
0.080
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
MAX
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