IRF6716MTR1PBF International Rectifier, IRF6716MTR1PBF Datasheet - Page 8

• Manufacturer Part Number: IRF6716MTR1PBF
• Description: MOSFET N-CH 25V 39A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6716MTR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 39A
• Vgs(th) (max) @ Id: 2.4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5150pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 78 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6716MTR1PBF; IRF6716MTR1PBFTR

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
™
™
CODE
A
B
C
D
E
F
G
H
J
K
L
M
R
P
1.38
MIN
6.25
3.85
0.35
0.68
0.68
0.80
0.38
0.88
2.28
0.616
0.020
0.08
4.80
METRIC
DIMENSIONS
1.42
1.01
MAX
6.35
5.05
3.95
0.45
0.72
0.72
0.84
0.42
2.41
0.676
0.080
0.17
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.0235
0.0008
0.003
MIN
IMPERIAL
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.0274
0.0031
0.007
MAX
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