STB11NK50ZT4 STMicroelectronics, STB11NK50ZT4 Datasheet - Page 5

• Manufacturer Part Number: STB11NK50ZT4
• Description: MOSFET N-CH 500V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB11NK50ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1390pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 77 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 480mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2451-2

STB11NK50Z - STP11NK50ZFP - STP11NK50Z
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 9.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
Symbol
I
t
V
SDM
t
t
r(Voff)
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
d(on)
d(off)
GSO
RRM
I
SD
Q
t
t
SD
t
t
t
c
r
f
f
rr
rr
(2)
(1)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Gate-source breakdown voltage Igs=±1mA (open drain)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
V
R
(see Figure 19)
V
R
(see Figure 19)
V
R
(see Figure 19)
I
I
di/dt = 100 A/µs,
V
DD
DD
DD
SD
SD
G
G
G
DD
= 4.7 Ω, V
=4.7 Ω, V
= 4.7 Ω, V
Test conditions
= 250 V, I
=400 V, I
=10 A, V
=10 A,
Test conditions
= 250 V, I
Test conditions
=45 V, Tj=150 °C
GS
D
GS
D
GS
D
=11.4 A,
GS
=5.5 A,
=5.5 A,
=0
=10 V
=10 V
=10 V
Electrical characteristics
Min.
Min.
Min
30
Typ.
Typ.
308
Typ.
14.5
11.5
2.4
16
18
41
15
12
27
Max
Max.
Max.
1.6
10
40
Unit
Unit
Unit
µC
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
V
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