TYPE V DSS STP80NF03L 30 V TYPICAL R (on) = 0.004 DS EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of ST- Microelectronics unique “Single Feature Size™” strip- based process. The ...
STP80NF03L ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate-source Voltage GS I (#) Drain Current (continuous (#) Drain Current (continuous Drain Current (pulsed) ( ...
ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol Parameter g (1) Forward Transconductance fs C Input Capacitance iss C Output Capacitance oss C Reverse Transfer rss Capacitance SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate ...
Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature NormalizedBreakdownVoltage vs Temperature STP80NF03L 5/8 ...
STP80NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...
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