STB80NF03L-04T4 STMicroelectronics, STB80NF03L-04T4 Datasheet
STB80NF03L-04T4
Specifications of STB80NF03L-04T4
STB80NF03L-04T4
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STB80NF03L-04T4 Summary of contents
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TYPE V DSS STP80NF03L 30 V TYPICAL R (on) = 0.004 DS EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of ST- Microelectronics unique “Single Feature Size™” strip- based process. The ...
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STP80NF03L ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate-source Voltage GS I (#) Drain Current (continuous (#) Drain Current (continuous Drain Current (pulsed) ( ...
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ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol Parameter g (1) Forward Transconductance fs C Input Capacitance iss C Output Capacitance oss C Reverse Transfer rss Capacitance SWITCHING ON Symbol Parameter t Turn-on Delay Time d(on) t Rise Time r Q Total Gate ...
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STP80NF03L Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...
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Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature NormalizedBreakdownVoltage vs Temperature STP80NF03L 5/8 ...
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STP80NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...
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TO-220 MECHANICAL DATA mm. DIM. MIN. TYP A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 16.40 L30 28.90 øP 3.75 Q ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...