STB11NM60T4 STMicroelectronics, STB11NM60T4 Datasheet

MOSFET N-CH 650V 11A D2PAK

STB11NM60T4

Manufacturer Part Number
STB11NM60T4
Description
MOSFET N-CH 650V 11A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB11NM60T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 25V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.45 Ohms
Forward Transconductance Gfs (max / Min)
5.2 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6545-2
STB11NM60T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB11NM60T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB11NM60T4
Manufacturer:
ST
Quantity:
10 000
Part Number:
STB11NM60T4
Manufacturer:
ST
0
Part Number:
STB11NM60T4
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STB11NM60T4
Quantity:
1 000
Part Number:
STB11NM60T4,STB11NM60,11NM60
Manufacturer:
ST
0
Order codes
General features
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
January 2007
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching application
N-channel 650V @ T
Type
STP11NM60FP
STB11NM60T4
STB11NM60-1
Part number
STP11NM60
(@T
V
650V
650V
650V
650V
J
=T
DSS
Jmax
)
R
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
P11NM60FP
B11NM60-1
DS(on)
B11NM60
P11NM60
Marking
Jmax
STP11NM60 - STP11NM60FP
11A
11A
11A
11A
STB11NM60 - STB11NM60-1
I
- 0.4Ω - 11A TO-220/FP/D
D
Rev 6
Internal schematic diagram
TO-220
D
MDmesh™ Power MOSFET
2
PAK
TO-220FP
Package
TO-220
D²PAK
I²PAK
1
1
2
3
3
2
Tape & reel
Packaging
PAK/I
TO-220FP
i
2
Tube
Tube
Tube
PAK
www.st.com
2
1 2
PAK
1
3
2
1/16
3
16

Related parts for STB11NM60T4

STB11NM60T4 Summary of contents

Page 1

... Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. Applications ■ Switching application Order codes Part number STB11NM60T4 STB11NM60-1 STP11NM60 STP11NM60FP January 2007 STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 - 0.4Ω - 11A TO-220/FP/D Jmax MDmesh™ ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Off-voltage rise time r(Voff) t Fall time f Cross-over time t c Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for 2 2 TO-220/D PAK/I Figure 3. Safe operating area for TO-220FP Figure 5. Output characterisics 6/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Figure 2. PAK Figure 4. Figure 6. Thermal impedance TO-220 / ...

Page 7

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized on resistance vs temperature 7/16 ...

Page 8

Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 ...

Page 9

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

Page 11

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 ...

Page 12

Package mechanical data DIM Ø 12/16 STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 ...

Page 13

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 DIM PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 0.23 0.7 0.93 ...

Page 14

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 15

STP11NM60-STP11NM60FP-STB11NM60-STB11NM60-1 6 Revision history Table 8. Revision history Date 09-Sep-2004 10-Jun-2005 26-Jul-2006 31-Aug-2006 21-Dec-2006 12-Jan-2007 Revision 1 First Release 2 Typing error, wrong description 3 The document has been reformatted, no content change 4 Typo mistake on order code 5 ...

Page 16

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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