STB200NF03T4 STMicroelectronics, STB200NF03T4 Datasheet - Page 10

• Manufacturer Part Number: STB200NF03T4
• Description: MOSFET N-CH 30V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB200NF03T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0032 Ohms
• Forward Transconductance Gfs (max / Min): 200 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6548-2; STB200NF03T4

Spice thermal model
3
10/18
Spice thermal model
Table 6.
Figure 18. Circuit
Spice parameters
Parameter
CTHERM1
CTHERM2
CTHERM3
CTHERM4
RTHERM1
RTHERM2
RTHERM3
RTHERM4
STP200NF03 - STB200NF03 - STB200NF03-1
Node
5 - 4
4 - 3
3 - 2
2 - 1
5 - 4
4 - 3
3 - 2
2 - 1
0.0012
Value
0.011
0.05
0.09
0.02
0.11
0.17
0.1