SI4876DY-T1-E3 Vishay, SI4876DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4876DY-T1-E3
• Description: MOSFET N-CH 20V 14A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4876DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 4.5V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.005 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 14 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Power Dissipation Pd: 3.6W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4876DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71312
S09-0221-Rev. F, 09-Feb-09
0.010
0.008
0.006
0.004
0.002
0.000
10
50
10
8
6
4
2
0
1
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
20
DS
On-Resistance vs. Drain Current
0.2
= 21 A
10
= 10 V
T
V
J
SD
Q
= 150 °C
40
g
- Source-to-Drain Voltage (V)
0.4
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
20
60
0.6
80
30
T
J
= 25 °C
0.8
100
V
V
GS
GS
40
= 2.5 V
= 4.5 V
1.0
120
1.2
140
50
0.020
0.015
0.010
0.005
0.000
8000
6000
4000
2000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
V
I
- 25
D
GS
= 21 A
= 4.5 V
4
1
V
V
DS
GS
T
0
C
J
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
8
2
C
50
Vishay Siliconix
iss
I
D
12
3
75
= 21 A
Si4876DY
www.vishay.com
100
16
4
125
150
20
5
3