FDB035AN06A0 Fairchild Semiconductor, FDB035AN06A0 Datasheet - Page 6

MOSFET N-CH 60V 80A TO-263AB

FDB035AN06A0

Manufacturer Part Number
FDB035AN06A0
Description
MOSFET N-CH 60V 80A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB035AN06A0

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
124nC @ 10V
Input Capacitance (ciss) @ Vds
6400pF @ 25V
Power - Max
310W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
22 A
Power Dissipation
310000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB035AN06A0
FDB035AN06A0TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB035AN06A0
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDB035AN06A0
Quantity:
373
©2010 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15. Unclamped Energy Test Circuit
g(REF)
Figure 19. Switching Time Test Circuit
P
Figure 17. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01
L
-
+
V
-
-
+
+
DD
V
V
DD
DD
0
I
0
0
V
V
V
g(REF)
0
0
V
DD
DS
GS
10%
GS
Figure 16. Unclamped Energy Waveforms
= 2V
Figure 20. Switching Time Waveforms
Figure 18. Gate Charge Waveforms
t
d(ON)
90%
Q
Q
gs
Q
50%
t
gs2
ON
g(TH)
10%
t
r
I
AS
PULSE WIDTH
Q
V
t
DS
gd
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
t
d(OFF)
90%
V
t
DS
OFF
FDB035AN06A0 Rev. A2
50%
t
V
f
10%
GS
V
= 10V
DD
90%

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