SIE810DF-T1-E3 Vishay, SIE810DF-T1-E3 Datasheet

MOSFET N-CH 20V 60A 10-POLARPAK

SIE810DF-T1-E3

Manufacturer Part Number
SIE810DF-T1-E3
Description
MOSFET N-CH 20V 60A 10-POLARPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SIE810DF-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.4 Ohm @ 25A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
300nC @ 10V
Input Capacitance (ciss) @ Vds
13000pF @ 10V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
10-PolarPAK® (L)
Minimum Operating Temperature
- 50 C
Configuration
Single Quad Drain Dual Gate Quad Source
Resistance Drain-source Rds (on)
0.0014 Ohm @ 10 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
45 A
Power Dissipation
5200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIE810DF-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE810DF-T1-E3
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SIE810DF-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
1 973
Part Number:
SIE810DF-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIE810DF-T1-E3
Quantity:
850
Document Number: 73774
S09-1338-Rev. C, 13-Jul-09
Notes:
a. Package limited is 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
www.vishay.com/doc?72945
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE810DF-T1-E3 (Lead (Pb)-free)
V
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
20
10
(V)
D
1
D
G
0.0016 at V
0.0027 at V
G
2
0.0014 at V
9
S
Top View
3
8
S
R
D
DS(on)
SiE810DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
4
GS
GS
7
S
GS
(Ω)
= 4.5 V
= 2.5 V
= 10 V
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
Limit
236
221
178
N-Channel 20-V (D-S) MOSFET
6
D
5
I
D
(A)
7
Bottom View
Package
4
Limit
S
60
60
60
d, e
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8
C
C
A
A
C
A
C
C
A
A
3
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
G
9
2
90 nC
g
(Typ.)
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Ultra Low Thermal Resistance Using Top-
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• Compliant to RoHS directive 2002/95/EC
• VRM
• DC/DC Conversion: Low-Side
• Synchronous Rectification
Definition
Exposed PolarPAK
Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Gen II Power MOSFET
Ratio Helps Prevent Shoot-Through
60
221 (Silicon Limit)
a
(Package Limit)
- 55 to 150
®
4.3
5.2
3.3
Limit
45
36
± 12
60
100
60
125
260
20
27
36
80
Package for Double-
b, c
b, c
b, c
b, c
b, c
a
a
Vishay Siliconix
G
www.vishay.com/ppg?73774
For Related Documents
N-Channel MOSFET
SiE810DF
www.vishay.com
D
S
Unit
mJ
°C
W
V
A
1

Related parts for SIE810DF-T1-E3

SIE810DF-T1-E3 Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE810DF-T1-E3 (Lead (Pb)-free) SiE810DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE810DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain Top Maximum Junction-to-Foot (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). SPECIFICATIONS °C, unless otherwise noted ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73774 S09-1338-Rev. C, 13-Jul- 1.5 V 0.3 0.4 0.5 18 000 15 000 12 000 60 80 100 150 180 210 SiE810DF Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 9000 6000 ...

Page 4

... SiE810DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.1 0.2 0.3 0.4 0.5 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.6 1 250 µA D 1.2 1.0 0.8 0.6 0 -Temperature (°C) J Threshold Voltage www.vishay.com 4 0.0040 0.0035 0.0030 0.0025 ° ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73774 S09-1338-Rev. C, 13-Jul-09 140 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiE810DF Vishay Siliconix 100 125 T - Case Temperature (° ...

Page 6

... SiE810DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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