STB20NM50T4 STMicroelectronics, STB20NM50T4 Datasheet - Page 5

• Manufacturer Part Number: STB20NM50T4
• Description: MOSFET N-CH 550V 20A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB20NM50T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 192W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 192 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5312-2; Q1966796; STB20NM50T4

STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration 300µs duty cycle 1.5%
Symbol
Symbol
I
V
t
SDM
t
t
r(Voff)
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
t
SD
t
t
t
t
c
r
f
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 14)
V
R
(see Figure 16)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
DD
DD
DD
DD
G
G
=4.7Ω, V
=4.7Ω, V
=20A, V
=20A,di/dt=100A/µs,
=20A,di/dt=100A/µs,
Test conditions
Test conditions
=250 V, I
=400 V, I
=100 V, Tj= 25°C
=100 V, Tj=150°C
GS
GS
GS
D
D
=0
=10A,
=20A,
=10V
=10V
Min.
Min.
Electrical characteristics
Typ.
Typ.
350
435
8.5
4.6
5.9
24
16
40
12
23
26
27
9
Max.
Max
1.5
20
80
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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