IRF1324STRL-7PP International Rectifier, IRF1324STRL-7PP Datasheet - Page 5

MOSFET N-CH 24V 429A D2PAK-7

IRF1324STRL-7PP

Manufacturer Part Number
IRF1324STRL-7PP
Description
MOSFET N-CH 24V 429A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1324STRL-7PP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 mOhm @ 160A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
429A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
252nC @ 10V
Input Capacitance (ciss) @ Vds
7700pF @ 19V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
429 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF1324STRL-7PPTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1324STRL-7PP
Manufacturer:
International Rectifier
Quantity:
135
www.irf.com
1000
0.001
100
0.01
10
0.1
1.0E-06
1
1E-006
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.05
0.10
D = 0.50
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.02
0.20
0.01
0.05
Duty Cycle = Single Pulse
0.10
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1.0E-05
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
τ
J
τ
J
τ
tav (sec)
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C and
Tstart =25°C (Single Pulse)
1
R
1
1.0E-03
τ
2
0.001
τ
R
2
2
R
2
R
τ
3
3
R
τ
3
3
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
4
τ
4
R
4
4
τ
1.0E-02
C
τ
Ri (°C/W)
0.01
0.02070
0.08624
0.24491
0.15005
0.000010
0.000070
0.001406
0.009080
τi (sec)
1.0E-01
0.1
5

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