STB180N55F3 STMicroelectronics, STB180N55F3 Datasheet - Page 5

• Manufacturer Part Number: STB180N55F3
• Description: MOSFET N-CH 55V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB180N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 330W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7939-2; STB180N55F3

STB180N55F3 - STP180N55F3
Table 5.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
SD
I
Q
SD
t
rr
rr
(2)
(1)
Source drain diode
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Parameter
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
=120A, V
=120A,
Test conditions
=35V, Tj=150°C
Figure
14)
GS
=0
Min.
Electrical characteristics
Typ.
0.11
3.5
60
Max.
120
480
1.5
Unit
µC
ns
A
A
V
A
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