IRF630PBF Vishay, IRF630PBF Datasheet - Page 5

• Manufacturer Part Number: IRF630PBF
• Description: MOSFET N-CH 200V 9A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF630PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 800pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Fall Time: 20 ns
• Rise Time: 28 ns
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.4Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF630PBF

Document Number: 91031
S11-0509-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91031_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
10
91031_11
Fig. 12a - Unclamped Inductive Test Circuit
8
6
4
2
0
25
p
to obtain
10
0.1
AS
10
-2
1
10
R
10 V
50
-5
G
T
0 − 0.5
0.2
0.1
0.05
0.02
0.01
C
V
, Case Temperature (°C)
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
I
AS
D.U.T.
10
100
-4
0.01 Ω
L
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
10
+
-
t
V
150
-3
1
, Rectangular Pulse Duration (s)
DD
A
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
AS
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
j
t
IRF630, SiHF630
= P
p
P
DM
DM
D.U.T.
x Z
www.vishay.com/doc?91000
Vishay Siliconix
t
R
1
1
thJC
D
/t
t
2
d(off)
V
t
+ T
2
DS
C
10
t
f
V
+
-
www.vishay.com
V
DD
DD
5