IRF630PBF Vishay, IRF630PBF Datasheet - Page 5
![MOSFET N-CH 200V 9A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF630PBF
Manufacturer Part Number
IRF630PBF
Description
MOSFET N-CH 200V 9A TO-220AB
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF630PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 5.4A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
800pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
9A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
No. Of Pins
3
Leaded Process Compatible
Yes
Fall Time
20 ns
Rise Time
28 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.4Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF630PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF630PBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 91031
S11-0509-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91031_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Vary t
required I
10
91031_11
Fig. 12a - Unclamped Inductive Test Circuit
8
6
4
2
0
25
p
to obtain
10
0.1
AS
10
-2
1
10
R
10 V
50
-5
G
T
0 − 0.5
0.2
0.1
0.05
0.02
0.01
C
V
, Case Temperature (°C)
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
I
AS
D.U.T.
10
100
-4
0.01 Ω
L
Single Pulse
(Thermal Response)
125
This datasheet is subject to change without notice.
10
+
-
t
V
150
-3
1
, Rectangular Pulse Duration (s)
DD
A
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
AS
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
1
j
t
IRF630, SiHF630
= P
p
P
DM
DM
D.U.T.
x Z
www.vishay.com/doc?91000
Vishay Siliconix
t
R
1
1
thJC
D
/t
t
2
d(off)
V
t
+ T
2
DS
C
10
t
f
V
+
-
www.vishay.com
V
DD
DD
5