IRFD020PBF Vishay, IRFD020PBF Datasheet - Page 2
IRFD020PBF
Manufacturer Part Number
IRFD020PBF
Description
MOSFET N-CH 50V 2.4A 4-DIP
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRFD020PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 1.4A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Configuration
Single
Resistance Drain-source Rds (on)
0.2 Ohms
Gate Charge Qg
11 nC
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
1.7 A
Power Dissipation
1.3 W
Mounting Style
Through Hole
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
50V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD020PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFD020PBF
Manufacturer:
SIL
Quantity:
5 759