NDP6060 Fairchild Semiconductor, NDP6060 Datasheet

MOSFET N-CH 60V 48A TO-220AB

NDP6060

Manufacturer Part Number
NDP6060
Description
MOSFET N-CH 60V 48A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDP6060

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 24A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
48A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
25mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.9V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.025 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
100 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
Part Number:
NDP6060
Manufacturer:
FS8
Quantity:
11 200
Part Number:
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Manufacturer:
NS
Quantity:
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Manufacturer:
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Part Number:
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Manufacturer:
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Part Number:
NDP6060L
Manufacturer:
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Quantity:
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Absolute Maximum Ratings
________________________________________________________________________________
Symbol
V
V
V
I
P
T
T
© 1997 Fairchild Semiconductor Corporation
D
J
L
DSS
DGR
GSS
D
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
,T
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
General Description
STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage - Continuous
Drain Current
Total Power Dissipation @ T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Continuous
- Nonrepetitive (t
- Continuous
- Pulsed
Derate above 25°C
GS
< 1 M )
C
P
= 25°C
< 50 µs)
T
C
T
=100
C
T
= 25°C unless otherwise noted
c
=25
o
C
o
C
Features
NDP6060
48A, 60V. R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
TO-220 and TO-263 (D
and surface mount applications.
DS(ON)
-65 to 175
± 20
± 40
0.67
144
100
275
60
60
48
32
= 0.025
2
G
PAK) package for both through hole
@ V
NDB6060
GS
=10V.
NDP6060 Rev. B1 / NDB6060 Rev. C
D
S
DS(ON)
March 1996
.
Units
W/°C
W
°C
°C
V
V
V
A

Related parts for NDP6060

NDP6060 Summary of contents

Page 1

... T = 25°C unless otherwise noted C NDP6060 < 50 µ = =100 25°C March 1996 = 0.025 @ V =10V. DS(ON DS(ON) 2 PAK) package for both through hole NDB6060 60 60 ± 20 ± 144 100 0.67 -65 to 175 275 NDP6060 Rev NDB6060 Rev. C Units W/°C °C °C ...

Page 2

... D GS Min Typ Max 200 48 60 250 125°C J 100 -100 2 2 125°C 1.4 2.3 3.6 J 0.02 0.025 0.032 0. 125° 1190 1800 475 800 150 400 10 20 145 300 150 39 70 7.6 22 NDP6060 Rev NDB6060 Rev. C Units µ ...

Page 3

... Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Conditions (Note 125° /dt = 100 A/µs F Min Typ Max Units 48 A 144 A 0.9 1.3 V 0.8 1 140 1.5 °C/W 62.5 °C/W NDP6060 Rev NDB6060 Rev. C ...

Page 4

... Figure 6. Gate Threshold Variation with V = 6.0V GS 7.0 8.0 9 DRAIN CURRENT ( 10V T = 125°C J 25°C -55° DRAIN CURRENT ( 250µ 100 125 150 T , JUNCTION TEMPERATURE (°C) J Temperature NDP6060 Rev NDB6060 Rev 175 ...

Page 5

... Current and Temperature 48A D C iss oss rss Figure 10. Gate Charge Characteristics t d(on DUT Figure 12. Switching Waveforms = 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( 12V DS 48V 24V GATE CHARGE (nC d(off INVERTED PULSE W IDTH NDP6060 Rev NDB6060 Rev ...

Page 6

... Figure 15. Transient Thermal Response Curve (continued -55° 25° 125° SINGLE PULSE Figure 14. Maximum Safe Operating Area 0 ,TIME ( 10V 1.5 C 25° DRAIN-SOURCE VOLTAGE ( ( 1.5 °C/W JC P(pk ( Duty Cycle 100 200 500 NDP6060 Rev NDB6060 Rev 1000 ...

Page 7

... These larger or intermediate boxes then will b e placed finally inside a labeled shipping box whic h still comes in different sizes depending on the number of units shipped. FSCINT Labe l samp le FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B CBVK741B019 1080 LOT: ...

Page 8

TO-220 Tape and Reel Data and Package Dimensions, continued TO-220 (FS PKG Code 37) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 September 1998, Rev. A ...

Page 9

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions 2 TO-263AB/D PAK Packaging Configuration: Figure 1.0 Customized Label 2 TO-263AB/D PAK Packaging Information Standard L86Z Packaging Option (no flow code) Packaging type TNR Rail/Tube Qty per Reel/Tube/Bag 800 45 ...

Page 10

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued 2 TO-263AB/D PAK Embossed Carrier Tape Configuration: Figure 3 Pkg type O263AB/ 10.60 15.80 24.0 1. PAK +/-0.10 ...

Page 11

TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued TO-263AB/D 2 PAK (FS PKG Code 45) Scale 1:1 on letter size paper Dimensions shown below are in: Part Weight per unit (gram): 1.4378 1:1 inches [millimeters] August 1998, ...

Page 12

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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