2SK3044 Panasonic - SSG, 2SK3044 Datasheet
2SK3044
Manufacturer Part Number
2SK3044
Description
MOSFET N-CH 450V 7A TO-220D
Manufacturer
Panasonic - SSG
Datasheet
1.2SK3044.pdf
(4 pages)
Specifications of 2SK3044
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 1mA
Input Capacitance (ciss) @ Vds
1300pF @ 20V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220D
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3044
Manufacturer:
Panasonic
Quantity:
12 500
Power MOSFETs
2SK3044
Silicon N-channel power MOSFET
■ Features
■ Applications
■ Absolute Maximum Ratings T
Note) * : L = 5.4 mH, I
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
• Avalanche energy capability guaranteed: EAS > 130 mJ
• Gate-source surrender voltageV
• High-speed switching
• No secondary breakdown
• Non-contact relay
• Solenoid drive
• Motor drive
• Control equipment
• Switching mode regulator
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation
Channel temperature
Storage temperature
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Diode forward voltage
Short-circuit forward transfer capacitance
(Common source)
Short-circuit output capacitance
(Common source)
Reverse transfer capacitance
(Common source)
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Parameter
Parameter
L
= 7 A, 1 pulse
T
a
*
= 25°C
GSS
C
Symbol
: ±30 V guaranteed
V
V
= 25°C ± 3°C
EAS
Symbol
R
R
T
R
I
T
P
I
Y
V
C
DSS
GSS
DP
t
t
D
stg
I
I
V
C
th(ch-c)
th(ch-a)
ch
DS(on)
C
C
D
d(on)
d(off)
V
DSS
GSS
DSS
t
t
= 25°C
DF
oss
iss
rss
r
f
th
fs
−55 to +150
Rating
I
V
V
V
V
V
I
V
V
V
D
DR
±30
±14
450
130
150
DS
GS
DS
DS
GS
DS
DD
GS
±7
40
= 1 mA, V
2
= 7 A, V
SJG00021BED
= 360 V, V
= ±30 V, V
= 25 V, I
= 25 V, I
= 10 V, I
= 20 V, V
= 10 V
= 150 V, I
GS
Conditions
GS
Unit
D
D
D
mJ
°C
°C
W
GS
V
V
A
A
D
= 0
= 1 mA
= 4 A
= 4 A
GS
DS
= 0
= 4 A, R
= 0, f = 1 MHz
= 0
= 0
L
= 37.5 Ω
Marking Symbol: K3044
Internal Connection
1
9.9
Min
450
2
2.0
3.0
±0.3
G
3
2.54
5.08
0.8
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
1 300
φ 3.2
0.56
Typ
160
150
5.0
70
25
45
50
±0.1
TO-220D-A1 Package
D
S
Max
0.75
−1.7
62.5
100
5.0
3.1
±1
4.6
±0.2
0.55
Unit: mm
1: Gate
2: Drain
3: Source
°C/W
°C/W
2.9
2.6
±0.15
Unit
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
V
S
±0.2
±0.1
1
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2SK3044 Summary of contents
Page 1
... Power MOSFETs 2SK3044 Silicon N-channel power MOSFET ■ Features • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltageV GSS • High-speed switching • No secondary breakdown ■ Applications • Non-contact relay • Solenoid drive • Motor drive • Control equipment • ...
Page 2
... Safe operation area 100 Non repetitive pulse = 25° µ 100 µ 0.1 100 ms 0. 100 1 000 ( V ) Drain-source voltage V DS 25° 5 Drain-source voltage V DS DS(on 2.0 1.6 = 150° 1.2 100°C 0.8 25°C 0.4 0° Drain current I ...
Page 3
... With a 100 mm × 100 mm × heat sink 10 1 −1 10 −2 10 −4 −3 −2 − Time t (s) 400 = 25° 300 V DS 200 100 Gate charge load Q g t (1) ( SJG00021BED 2SK3044 d(on d(off) 16 300 250 12 200 8 150 100 Drain current 150 25°C t d(off d(on ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...