IRFBF20LPBF Vishay, IRFBF20LPBF Datasheet - Page 3

• Manufacturer Part Number: IRFBF20LPBF
• Description: MOSFET N-CH 900V 1.7A TO-262
• Manufacturer: Vishay

Specifications of IRFBF20LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 1.7A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBF20LPBF

Document Number: 91121
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