IRFI720GPBF Vishay, IRFI720GPBF Datasheet

MOSFET N-CH 400V 2.6A TO220FP

IRFI720GPBF

Manufacturer Part Number
IRFI720GPBF
Description
MOSFET N-CH 400V 2.6A TO220FP
Manufacturer
Vishay
Datasheets

Specifications of IRFI720GPBF

Transistor Polarity
N-Channel
Continuous Drain Current Id
2.6A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1.8ohm
Rds(on) Test Voltage Vgs
10V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 1.6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
410pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.8 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.5 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.6 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Voltage Vgs Max
20V
Operating Temperature
RoHS Compliant
Leaded Process Compatible
Yes
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFI720GPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFI720GPBF
Quantity:
25 780
Company:
Part Number:
IRFI720GPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91152
S09-0012-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 3.3 A, dI/dt ≤ 65 A/µs, V
= 50 V, starting T
(Ω)
a
J
G
= 25 °C, L = 38 mH, R
D
c
a
a
S
DD
b
V
≤ V
GS
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
400
3.3
20
11
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
1.8
GS
AS
6-32 or M3 screw
at 10 V
= 2.6 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI720GPbF
SiHFI720G-E3
IRFI720G
SiHFI720G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFI720G, SiHFI720G
design,
- 55 to + 150
LIMIT
300
± 20
0.24
400
150
2.6
1.7
2.6
3.0
4.0
1.1
10
30
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
RoHS*
COMPLIANT
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRFI720GPBF

IRFI720GPBF Summary of contents

Page 1

... S external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The N-Channel MOSFET FULLPAK is mounted to a heatsink using a single clip single screw fixing. TO-220 FULLPAK IRFI720GPbF SiHFI720G-E3 IRFI720G SiHFI720G = 25 °C, unless otherwise noted °C ...

Page 2

... IRFI720G, SiHFI720G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91152 S09-0012-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI720G, SiHFI720G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFI720G, SiHFI720G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91152 S09-0012-Rev. A, 19-Jan-09 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91152 S09-0012-Rev. A, 19-Jan-09 IRFI720G, SiHFI720G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFI720G, SiHFI720G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91152 ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91152. Document Number: 91152 S09-0012-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords