IRFBE30SPBF Vishay, IRFBE30SPBF Datasheet - Page 2

• Manufacturer Part Number: IRFBE30SPBF
• Description: MOSFET N-CH 800V 4.1A D2PAK
• Manufacturer: Vishay

Specifications of IRFBE30SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.1A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFBE30SPBF

Document Number: 91119
Notes:

‚
ƒ
„
V
∆ΒV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11).
T
V
SD
AS
J
DSS
DD
≤ 150°C.
≤ 4.1A, di/dt ≤ 100A/µs, V
= 4.1A. (See Figure 12).
=50V, starting T
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
J
= 25°C, L=29mH, R
Parameter
™
DD
≤ 600,
G
=25Ω
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
800
–––
–––
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–––
–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
2.5
1300
0.90
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
310
190
–––
–––
–––
480
4.5
7.5
1.8
12
33
82
30
-100
–––
–––
–––
100
500
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
720
3.0
4.0
9.6
4.1
1.8
2.7
78
45
16
V/°C
nC
nH
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 4.1A
= 4.1A
= 25°C, I
= 25°C, I
= 12Ω
= 95Ω, See Fig. 10
= 0V, I
= 10V, I
= V
= 100V, I
= 800V, V
= 640V, V
= 20V
= -20V
= 400V
= 10V, See Fig. 6 & 13
= 400V
= 0V
= 25V
GS
, I
D
Conditions
Conditions
D
S
F
D
= 250µA
D
= 250µA
= 4.1A
= 4.1A, V
= 2.5A
GS
GS
= 2.5A
f
= 0V
= 0V, T
www.vishay.com
D
f
= 1mA
f
GS
G
J
= 125°C
G
= 0V
f
f
S
D
D
S
2