IRFI640GPBF Vishay, IRFI640GPBF Datasheet

MOSFET N-CH 200V 9.8A TO220FP

IRFI640GPBF

Manufacturer Part Number
IRFI640GPBF
Description
MOSFET N-CH 200V 9.8A TO220FP
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFI640GPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 5.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.8 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
9.8A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
180mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFI640GPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFI640GPBF
Manufacturer:
VISHAY
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91150
S09-0013-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 18 A, dI/dt ≤ 150 A/µs, V
= 50 V, starting T
(Ω)
a
J
G
= 25 °C, L = 6.7 mH, R
D
c
a
a
S
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
J
N-Channel MOSFET
Single
≤ 150 °C.
200
70
13
39
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.18
GS
AS
6-32 or M3 screw
at 10 V
= 9.8 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI640GPbF
SiHFI640G-E3
IRFI640G
SiHFI640G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFI640G, SiHFI640G
design,
- 55 to + 150
LIMIT
300
± 20
0.32
200
430
9.8
6.2
9.8
4.0
5.0
1.1
39
40
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFI640GPBF Summary of contents

Page 1

... The isolation is equivalent to using a 100 S micron mica barrier with standard TO-220 product. The N-Channel MOSFET FULLPAK is mounted to a heatsink using a single clip single screw fixing. TO-220 FULLPAK IRFI640GPbF SiHFI640G-E3 IRFI640G SiHFI640G = 25 °C, unless otherwise noted °C ...

Page 2

... IRFI640G, SiHFI640G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91150 S09-0013-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI640G, SiHFI640G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFI640G, SiHFI640G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91150 S09-0013-Rev. A, 19-Jan-09 ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91150 S09-0013-Rev. A, 19-Jan-09 IRFI640G, SiHFI640G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFI640G, SiHFI640G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91150 ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91150. Document Number: 91150 S09-0013-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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