IRFP240PBF Vishay, IRFP240PBF Datasheet
IRFP240PBF
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IRFP240PBF Summary of contents
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... TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 S package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC IRFP240PbF SiHFP240-E3 IRFP240 SiHFP240 = 25 °C, unless otherwise noted) C SYMBOL ° ...
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... IRFP240, SiHFP240 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFP240, SiHFP240 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...
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... IRFP240, SiHFP240 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91210 S11-0445-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFP240, SiHFP240 Vishay Siliconix D.U. Pulse width ≤ ...
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... IRFP240, SiHFP240 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
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... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91210. ...
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... L 0.065 0.093 L1 0.102 0.135 N 0.102 0.133 Ø P 0.015 0.034 Ø P1 0.015 0.030 Q 0.776 0.815 R 0.515 - S Package Information Vishay Siliconix A 7 ØP (Datum B) Ø Ø Thermal pad View (b1, b3, b5) Planting Base metal (c) c1 (b, b2, b4) ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...