IRFP450APBF Vishay, IRFP450APBF Datasheet - Page 2

• Manufacturer Part Number: IRFP450APBF
• Description: MOSFET N-CH 500V 14A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP450APBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 2038pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP450APBF

IRFP450A, SiHFP450A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
R
oss
R
t
t
R
I
I
C
C
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
t
I
SM
t
thCS
thJA
thJC
oss
oss
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
r
f
rr
g
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
V
J
V
R
DS
GS
GS
GS
T
= 25 °C, I
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
V
Reference to 25 °C, I
J
GS
= 6.2 Ω, R
= 400 V, V
= 10 V
= 0 V; V
= 10 V
= 25 °C, I
= 0 V; V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
= 0 V; V
TYP.
oss
0.24
TEST CONDITIONS
DS
DD
DS
GS
DS
-
-
= 500 V, V
while V
= V
= 50 V, I
= 250 V, I
F
= 0 V, I
V
V
DS
= 14 A, dI/dt = 100 A/µs
V
DS
GS
DS
S
GS
GS
D
GS
DS
= 400 V, f = 1.0 MHz
= 1.0 V, f = 1.0 MHz
I
= 14 A, V
= ± 30 V
= 17 Ω, see fig. 10
D
= 25 V,
, I
= 0 V,
= 0 V, T
= 14 A, V
DS
= 0 V to 400 V
D
D
see fig. 6 and 13
D
= 250 µA
= 250 µA
D
is rising from 0 to 80 % V
GS
= 8.4 A
I
= 14 A,
D
D
= 0 V
= 8.4 A
GS
= 1 mA
J
G
= 125 °C
DS
= 0 V
b
= 400 V,
b
c
MAX.
b
0.65
D
S
b
40
b
-
b
MIN.
500
2.0
7.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
S-81271-Rev. A, 16-Jun-08
Document Number: 91230
TYP.
2038
2859
0.58
307
487
3.9
10
81
96
15
36
35
29
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.40
S
250
731
4.0
1.4
5.8
25
64
16
26
14
56
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
µC
pF
ns
ns
Ω
V
V
S
A
V