IRFH5255TR2PBF International Rectifier, IRFH5255TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5255TR2PBF
• Description: MOSFET N-CH 25V 15A 8VQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5255TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 988pF @ 13V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.9 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 3.6 W
• Gate Charge Qg: 7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5255TR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
20
15
10
Fig 12. On-Resistance vs. Gate Voltage
5
0
Fig 15a. Switching Time Test Circuit
2
R G
4
20V
V GS, Gate -to -Source Voltage (V)
V DS
6
t p
≤ 0.1
8
≤ 1
I AS
D.U.T
0.01 Ω
L
10
12
T J = 125°C
T J = 25°C
14
15V
I D = 15A
16
DRIVER
+
18
-
+
-
V DD
20
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
225
200
175
150
125
100
75
50
25
0
Fig 14b. Unclamped Inductive Waveforms
90%
25
V
10%
V
I
DS
AS
GS
Starting T J , Junction Temperature (°C)
Fig 15b. Switching Time Waveforms
50
t
d(on)
t
75
t p
r
IRFH5255PbF
TOP
BOTTOM 15A
100
t
d(off)
V
(BR)DSS
8.40A
125
I D
4.13A
t
f
150
5