IXTY1R6N50P IXYS, IXTY1R6N50P Datasheet
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Manufacturer Part Number
IXTY1R6N50P
Description
MOSFET N-CH 500V 1.6A DPAK
Specifications of IXTY1R6N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
5.5V @ 25µA
Gate Charge (qg) @ Vgs
3.9nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
43W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohms
Forward Transconductance Gfs (max / Min)
1.3 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.6 A
Power Dissipation
43 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
1.6
Rds(on), Max, Tj=25°c, (?)
6.5
Ciss, Typ, (pf)
140
Qg, Typ, (nc)
3.9
Trr, Typ, (ns)
400
Pd, (w)
43
Rthjc, Max, (k/w)
2.9
Package Style
TO-252AA (D PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
GS
J
JM
stg
L
DSS
DGR
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10 s
TO-252
TO-220
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
Mounting torque (TO-220)
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 25 μA
G
= 0.5 I
DS
= 50 Ω
= 0 V
D25
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTP 1R6N50P
IXTY 1R6N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
500
500
±30
±40
150
260
1.6
2.5
1.6
0.8
75
10
43
5
4
±100
Max.
5.5
50
6.5
1
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
TO-252 (IXTY)
Features
Advantages
TO-220 (IXTP)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
DS(on)
DSS
G = Gate
S = Source
G
D
G
S
S
≤ ≤ ≤ ≤ ≤
= 500
=
1.6
6.5
D = Drain
TAB = Drain
(TAB)
DS99444E(04/06)
(TAB)
A
V
Ω Ω Ω Ω Ω
Related parts for IXTY1R6N50P
IXTY1R6N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTP 1R6N50P IXTY 1R6N50P Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 1.6 2 ≤ DSS 43 -55 ... +150 150 -55 ... +150 ...
... Pulse test, t ≤ 300 μs, duty cycle d ≤ 1.6 A, -di/dt = 100 A/μ 100V R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
... Value vs. I D25 3.0 2 10V GS 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0.4 0.8 1 Amperes D © 2006 IXYS All rights reserved º C 2.7 2.4 2.1 1.8 1.5 1.2 6V 0.9 0.6 0 º C 3.00 2.75 2.50 2.25 2. ...
... J 2.0 1.5 1.0 0.5 0.0 0.5 0.6 0 Volts S D Fig. 11. Capacitance 1000 f = 1MHz 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 º ...
... IXYS All rights reserved Fig. 13. M axim um Trans ie nt The tance 0.001 0.01 Pulse Width - Second IXTP 1R6N50P IXTY 1R6N50P 0 ...
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