IXTP55N075T IXYS, IXTP55N075T Datasheet - Page 2

• Manufacturer Part Number: IXTP55N075T
• Description: MOSFET N-CH 75V 55A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP55N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19.5 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 25µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0195 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 55 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 55
• Rds(on), Max, Tj=25°c, (?): 0.0195
• Ciss, Typ, (pf): 1400
• Qg, Typ, (nc): 33
• Trr, Typ, (ns): 50
• Trr, Max, (ns): -
• Pd, (w): 130
• Rthjc, Max, (k/w): 1.15
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
Values
T
I
I
V
t
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
(T
d(on)
d(off)
f
S
r
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
J
iss
oss
thJC
thCS
SD
rss
g(on)
gs
gd
= 25°C unless otherwise specified)
J
TO-252 (IXTY) Outline
= 25°C unless otherwise specified)
Test Conditions
V
V
V
R
V
TO-220
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/μs
= 40 V, V
= 18 Ω (External)
= 10 V; I
= 10 V, V
= 0 V, V
= 0 V
= 10 V, V
1 Anode
2 NC
3 Anode
4 Cathode
GS
D
DS
GS
DS
DS
= 0.5 I
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
D25
, Note 1
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 10 A
= 10 A
Dim.
D1
A1
A2
b1
b2
E1
e1
L1
L2
L3
c1
A
D
E
H
b
c
e
L
5,049,961
5,063,307
5,187,117
2.19 2.38
0.89 1.14
0.64 0.89
0.76 1.14
5.21 5.46
0.46 0.58
0.46 0.58
5.97 6.22
4.32 5.21
6.35 6.73
4.32 5.21
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
Min. Max.
2.28 BSC
4.57 BSC
Millimeter
0 0.13
Min.
Min.
5,237,481
5,381,025
5,486,715
16
Characteristic Values
0.086
0.035
0.025
0.030
0.205
0.018
0.018
0.235
0.170
0.250
0.170
0.370
0.020
0.025
0.035
0.100
Min.
0.090 BSC
0.180 BSC
Characteristic
Inches
0
1400
Typ.
Typ.
235
123
0.094
0.045
0.005
0.035
0.045
0.215
0.023
0.023
0.245
0.205
0.265
0.205
0.410
0.040
0.040
0.050
0.115
0.5
Max.
27
20
50
44
41
33
10
50
6,162,665
6,259,123 B1
6,306,728 B1
9
Max.
Max.
1.15 °C/W
150
1.2
55
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
ns
S
A
A
V
Notes:
1.
2. On through-hole packages, R
TO-220 (IXTP) Outline
The product presented herein is under
development.
tions offered are derived from data
gathered during objective characteriza-
tions of preliminary engineering lots; but
also may yet contain some information
supplied during a pre-production design
evaluation. IXYS reserves the right to
change limits, test conditions, and
dimensions without notice.
5 mm or less from the package body.
Kelvin test contact location must be
Pulse test: t ≤ 300 μs, duty cycle
6,683,344
6,710,405B2
6,710,463
d ≤ 2 %;
PRELIMINARY TECHNICAL
Pins: 1 - Gate
3 - Source 4, TAB - Drain
INFORMATION
6,727,585
6,759,692
6771478 B2
The Technical Specifica-
IXTP55N075T
IXTY55N075T
2 - Drain
7,005,734 B2
7,063,975 B2
7,071,537
DS(on)