IRLU2705PBF International Rectifier, IRLU2705PBF Datasheet - Page 6

• Manufacturer Part Number: IRLU2705PBF
• Description: MOSFET N-CH 55V 28A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU2705PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 5V
• Input Capacitance (ciss) @ Vds: 880pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 24 A
• Power Dissipation: 46 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 16.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLU2705PBF

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
I AS
t p
D.U.T
0.01 Ω
L
Q
Charge
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
-
V DD
A
250
200
150
100
50
0
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
25
V
V
GS
DD
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
= 25V
Current Regulator
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
Current Sampling Resistors
75
.3µF
I
G
100
D.U.T.
125
I
www.irf.com
D
TOP
BOTTOM
+
-
150
V
DS
11A
6.6A
16A
I
D
175
A