IXTA08N50D2 IXYS, IXTA08N50D2 Datasheet - Page 4

• Manufacturer Part Number: IXTA08N50D2
• Description: MOSFET N-CH 500V 800MA D2PAK
• Manufacturer: IXYS

Specifications of IXTA08N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 4.6 Ohm @ 400mA, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 800mA
• Gate Charge (qg) @ Vgs: 12.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 312pF @ 25V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vds, Max, (v): 500
• Id(on), Min, (a): 0.8
• Rds(on), Max, (?): 4.6
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 312
• Crss, Typ, (pf): 11
• Qg, Typ, (nc): 12.7
• Pd, (w): 60
• Rthjc, Max, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.3
1.2
1.1
1.0
0.9
0.8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-3.5
-50
-50
Fig. 7. Normalized R
V
I
V
D
GS
DS
-3.0
= 0.4A
= 0V
-25
= 30V
-25
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
-2.0
vs. Junction Temperature
T
T
Fig. 9. Input Admittance
J
J
- Degrees Centigrade
- Degrees Centigrade
25
25
-1.5
V
T
DS(on)
J
GS
= 125ºC
- 40ºC
- Volts
25ºC
-1.0
50
50
vs. Junction Temperature
-0.5
V
75
75
GS(off)
0.0
@ V
BV
100
100
DSX
DS
0.5
= 25V
@ V
GS
125
125
= - 5V
1.0
150
1.5
150
3.0
2.5
2.0
1.5
1.0
0.5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0.0
0.0
0.3
T
J
V
= 125ºC
T
V
DS
J
GS
= 25ºC
= 30V
= -10V
Fig. 8. R
0.4
IXTY08N50D2
0.5
0.4
Fig. 12. Forward Voltage Drop of
Fig. 10. Transconductance
DS(on)
0.8
1.0
0.5
vs. Drain Current
Normalized to I
Intrinsic Diode
I
I
D
D
T
V
J
- Amperes
- Amperes
SD
= 125ºC
- Volts
1.2
1.5
0.6
IXTA08N50D2
IXTP08N50D2
D
1.6
2.0
0.7
= 0.4A Value
V
GS
= 0V
5V
T
2.5
2.0
0.8
J
- - - -
T
= - 40ºC
J
125ºC
= 25ºC
25ºC
3.0
2.4
0.9