IXTP5N50P IXYS, IXTP5N50P Datasheet
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Manufacturer Part Number
IXTP5N50P
Description
MOSFET N-CH 500V 4.8A TO-220
Specifications of IXTP5N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.4 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
5.5V @ 50µA
Gate Charge (qg) @ Vgs
12.6nC @ 10V
Input Capacitance (ciss) @ Vds
620pF @ 25V
Power - Max
89W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Forward Transconductance Gfs (max / Min)
4.7 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.8 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
5.0
Rds(on), Max, Tj=25°c, (?)
1.4
Ciss, Typ, (pf)
620
Qg, Typ, (nc)
12.6
Trr, Typ, (ns)
400
Pd, (w)
89
Rthjc, Max, (k/w)
1.4
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-220
TO-263
TO-252
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
S
V
Continuous
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
DSS
, I
D
D
D
= 250 μA
= 50 μA
G
= 0.5 I
DS
= 30 Ω
= 0 V
D25
(TO-220)
GS
= 1 MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXTA 5N50P
IXTP 5N50P
IXTV 5N50P
IXTY 5N50P
,
500
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
± 30
± 40
500
500
250
150
300
260
4.8
0.8
10
20
10
89
5
4
3
±100
Max.
5.5
1.4
50
5
V/ns
mJ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
TO-263 (IXTA)
TO-220 (IXTP)
TO-252 (IXTU)
TO-252 (IXTY)
Features
l
l
l
Advantages
l
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
V
I
R
D25
G = Gate
S = Source
DSS
DS(on)
G
D
G
S
G
= 500 V
= 4.8 A
≤ ≤ ≤ ≤ ≤ 1.4 Ω Ω Ω Ω Ω
S
S
D = Drain
TAB = Drain
DS99446E(04/06)
(TAB)
(TAB)
(TAB)
Related parts for IXTP5N50P
IXTP5N50P Summary of contents
... V GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTA 5N50P IXTP 5N50P IXTV 5N50P IXTY 5N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 250 ≤ DSS 89 -55 ...
... Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ TO-252 (IXTY) Outline Pins Gate 2,4 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 ...
... V - Volts D S Fig Norm alized to DS(on) 0.5 I Value vs. I D25 3 10V GS 3 2.6 2.2 1.8 1 Amperes D © 2006 IXYS All rights reserved º 10V º C 3.2 2.8 7V 2.4 6V 1.6 1.2 5V 0.8 0 6.0 º 125 C J 5.0 4.0 3.0 2.0 º ...
... V - Volts G S Fig. 9. Source Current vs. Source-To-Drain Voltage º 125 0.4 0.5 0.6 0 Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0.8 0.9 1 100 C iss 10 C oss 1 C rss ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.001 0.01 Pulse Width - Seconds IXTA 5N50P IXTP 5N50P IXTY 5N50P 0 ...
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