IRFU6215PBF International Rectifier, IRFU6215PBF Datasheet - Page 3

• Manufacturer Part Number: IRFU6215PBF
• Description: MOSFET P-CH 150V 13A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU6215PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 13 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFU6215PBF

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100
100
10
10
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
1
4
1
TOP
BOTTOM - 4.5V
-V
-V
5
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
GS
DS
, Gate-to-Source Voltage (V)
-4.5V
, Drain-to-Source Voltage (V)
6
T = 25°C
J
10
7
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
c
T = 175°C
J
= -50V
8
9
100
10
A
A
100
10
2.5
2.0
1.5
1.0
0.5
0.0
1
-60 -40 -20
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
TOP
BOTTOM - 4.5V
I
D
= -11A
-V
T , Junction Temperature (°C)
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
J
VGS
DS
Vs. Temperature
IRFR/U6215PbF
0
, Drain-to-Source Voltage (V)
20
40
10
60
-4.5V
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
C
V
GS
= -10V
3
100
A
A