IXTP100N04T2 IXYS, IXTP100N04T2 Datasheet - Page 5

• Manufacturer Part Number: IXTP100N04T2
• Description: MOSFET N-CH 40V 100A TO-220
• Manufacturer: IXYS
• Series: TrenchT2™r

Specifications of IXTP100N04T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 2690pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 100
• Rds(on), Max, Tj=25°c, (?): 0.007
• Ciss, Typ, (pf): 2690
• Qg, Typ, (nc): 25.5
• Trr, Typ, (ns): 34
• Pd, (w): 150
• Rthjc, Max, (k/w): 1.0
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
20
18
16
14
12
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
8
6
4
2
20
25
4
t
T
V
Switching Times vs. Gate Resistance
r
J
DS
35
30
Switching Times vs. Drain Current
= 125ºC, V
6
= 20V
Rise Time vs. Junction Temperature
Fig. 17. Resistive Turn-off
45
Fig. 15. Resistive Turn-on
40
8
Fig. 13. Resistive Turn-on
t
I
d(on)
GS
D
55
= 50A, 100A
T
= 10V
50
J
10
- - - -
R
- Degrees Centigrade
I
G
D
65
- Ohms
- Amperes
60
12
I
75
D
t
R
V
f
DS
G
I
= 50A
D
= 5Ω, V
70
14
= 20V
= 100A
85
T
J
80
GS
= 25ºC
16
t
95
T
d(off)
J
= 10V
= 125ºC
R
V
V
- - - -
105
90
GS
DS
G
18
= 5Ω
= 10V
= 20V
115
100
20
28
26
24
22
20
18
16
14
12
10
16
15
14
13
12
11
10
9
125
80
70
60
50
40
30
20
10
14
13
12
11
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
0
9
8
7
6
5
4
3
25
4
20
I
Switching Times vs. Junction Temperature
D
t
T
V
Switching Times vs. Gate Resistance
= 100A
35
f
J
t
R
V
DS
R
V
V
f
= 125ºC, V
G
DS
6
GS
DS
G
= 20V
30
= 5Ω, V
= 5Ω
= 20V
= 10V
= 20V
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
Rise Time vs. Drain Current
8
Fig. 14. Resistive Turn-on
40
t
GS
t
d(off)
55
GS
d(off)
T
= 10V
J
= 10V
I
- Degrees Centigrade
D
10
- - - -
- - - -
65
= 50A
50
I
R
D
G
- Amperes
- Ohms
I
75
12
D
T
T
60
= 50A
J
J
I
= 125ºC
= 25ºC
D
85
= 100A
14
I
70
D
95
= 100A
16
105
80
18
115
90
125
20
23
22
21
20
19
18
17
16
15
14
13
12
80
70
60
50
40
30
20
10
0
100