IXTP32P05T IXYS, IXTP32P05T Datasheet - Page 3

• Manufacturer Part Number: IXTP32P05T
• Description: MOSFET P-CH 50V 32A TO-220
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTP32P05T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1975pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vdss, Max, (v): -50
• Id(cont), Tc=25°c, (a): -32
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 1975
• Qg, Typ, (nc): 46
• Trr, Typ, (ns): 26
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
-32
-28
-24
-20
-16
-12
-32
-28
-24
-20
-16
-12
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
-8
-4
-8
-4
0
0
0
0
0
V
-0.2
-5
GS
-0.2
Fig. 3. Output Characteristics @ T
= -10V
Fig. 1. Output Characteristics @ T
Fig. 5. R
-10
-0.4
-15
-0.4
-0.6
DS(on)
-20
-0.8
Drain Current
Normalized to I
-0.6
I
D
V
V
-25
DS
- Amperes
V
DS
V
GS
GS
- Volts
-1
- Volts
= -10V
= -10V
- 9V
- 9V
-30
-0.8
-1.2
-35
D
-1.4
T
= -16A vs.
J
-1
-40
= 125ºC
J
J
= 125ºC
T
= 25ºC
J
-1.6
= 25ºC
-45
-1.2
- 8V
- 7V
- 6V
- 5V
- 8V
- 7V
- 6V
- 5V
-1.8
-50
-1.4
-55
-2
-100
-35
-30
-25
-20
-15
-10
-90
-80
-70
-60
-50
-40
-30
-20
-10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-5
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
-1
= -10V
-25
-25
Fig. 4. R
-2
Fig. 6. Maximum Drain Current vs.
0
0
IXTY32P05T IXTA32P05T
-3
T
DS(on)
J
Junction Temperature
V
- Degrees Centigrade
T
GS
Case Temperature
J
25
25
- Degrees Centigrade
= -10V
-4
Normalized to I
V
DS
50
50
-5
- Volts
I
D
- 9V
- 8V
- 7V
- 6V
- 5V
= - 32A
-6
75
75
IXTP32P05T
D
-7
= -16A vs.
I
100
100
D
= -16A
-8
J
= 25ºC
125
125
-9
150
150
-10