IXTP1R6N50D2 IXYS, IXTP1R6N50D2 Datasheet - Page 3

• Manufacturer Part Number: IXTP1R6N50D2
• Description: MOSFET N-CH 500V 1.6A TO220AB
• Manufacturer: IXYS

Specifications of IXTP1R6N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 2.3 Ohm @ 800mA, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Gate Charge (qg) @ Vgs: 23.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 645pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Vds, Max, (v): 500
• Id(on), Min, (a): 1.6
• Rds(on), Max, (?): 2.3
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 645
• Crss, Typ, (pf): 16.5
• Qg, Typ, (nc): 23.7
• Pd, (w): 100
• Rthjc, Max, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

© 2009 IXYS CORPORATION, All Rights Reserved
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0
0
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
1
100
Fig. 5. Drain Current @ T
1.0
200
2
V
V
DS
DS
V
DS
- Volts
V
- Volts
GS
1.5
- Volts
300
3
= 5V
3V
2V
1V
V
GS
-1V
-2V
0V
= 5V
2V
1V
2.0
J
400
4
= 100ºC
J
J
= 125ºC
= 25ºC
-1V
-2V
-3V
V
0V
GS
2.5
500
5
= -2.50V
-3.75V
-2.75V
-3.00V
-3.25V
-3.50V
-4.00V
600
3.0
6
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
10
9
8
7
6
5
4
3
2
1
0
-4.2
0
0
Fig. 2. Extended Output Characteristics @ T
-4.0
IXTY1R6N50D2 IXTA1R6N50D2
Fig. 6. Dynamic Resistance vs. Gate Voltage
100
5
-3.8
Fig. 4. Drain Current @ T
-3.6
200
10
T
J
= 100ºC
-3.4
V
V
DS
DS
V
GS
- Volts
- Volts
300
-3.2
15
- Volts
T
IXTP1R6N50D2
J
-3.0
= 25ºC
400
20
J
= 25ºC
-2.8
∆
V
V
GS
DS
= 5V
= 350V - 100V
-1V
3V
-2V
V
-2.6
2V
1V
0V
GS
500
J
25
= - 2.25V
= 25ºC
- 2.50V
- 2.75V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
- 4.00V
-2.4
-2.2
600
30