IRFU2307ZPBF International Rectifier, IRFU2307ZPBF Datasheet - Page 5

• Manufacturer Part Number: IRFU2307ZPBF
• Description: MOSFET N-CH 75V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU2307ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2190pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 53A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 12.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 4V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
0.1
60
50
40
30
20
10
10
0
1
Fig 9. Maximum Drain Current vs.
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
0.20
0.10
0.05
0.02
0.01
Case Temperature
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
J
2.5
2.0
1.5
1.0
0.5
J
1
Ci= i Ri
1
Ci
Fig 10. Normalized On-Resistance
-60 -40 -20 0
0.001
i Ri
I D = 32A
V GS = 10V
R
1
R
1
T J , Junction Temperature (°C)
2
R
vs. Temperature
2
2
R
2
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
C
Ri (°C/W)
0.01
0.7938 0.000499
0.6257 0.005682
i (sec)
5
0.1