IXTA1R6N50D2 IXYS, IXTA1R6N50D2 Datasheet - Page 4

• Manufacturer Part Number: IXTA1R6N50D2
• Description: MOSFET N-CH 500V 1.6A D2PAK
• Manufacturer: IXYS

Specifications of IXTA1R6N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 2.3 Ohm @ 800mA, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Gate Charge (qg) @ Vgs: 23.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 645pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (3 leads + tab)
• Vds, Max, (v): 500
• Id(on), Min, (a): 1.6
• Rds(on), Max, (?): 2.3
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 645
• Crss, Typ, (pf): 16.5
• Qg, Typ, (nc): 23.7
• Pd, (w): 100
• Rthjc, Max, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.3
1.2
1.1
1.0
0.9
0.8
6
5
4
3
2
1
0
-3.5
-50
-50
V
I
Fig. 7. Normalized R
V
D
GS
DS
-3.0
= 0.8A
= 30V
= 0V
-25
-25
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
vs. Junction Temperature
Fig. 9. Input Admittance
-2.0
T
T
J
J
25
25
- Degrees Centigrade
- Degrees Centigrade
T
DS(on)
J
V
-1.5
= 125ºC
GS
- 40ºC
25ºC
- Volts
50
50
vs. Junction Temperature
-1.0
75
75
V
-0.5
GS(off)
BV
@ V
100
100
DSX
0.0
DS
@ V
= 25V
GS
125
125
= - 5V
0.5
150
1.0
150
3.5
3.0
2.5
2.0
1.5
1.0
0.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.3
0
0
T
T
J
J
V
V
T
V
= 125ºC
= 25ºC
GS
J
DS
GS
= - 40ºC
IXTY1R6N50D2 IXTA1R6N50D2
= -10V
= 30V
= 0V
125ºC
Fig. 8. R
25ºC
5V
0.4
1
1
- - - -
Fig. 12. Forward Voltage Drop of
Fig. 10. Transconductance
DS(on)
0.5
2
2
vs. Drain Current
Normalized to I
Intrinsic Diode
T
J
I
I
D
D
= 125ºC
V
SD
- Amperes
- Amperes
0.6
- Volts
3
3
IXTP1R6N50D2
D
0.7
4
4
= 0.8A Value
0.8
5
5
T
J
= 25ºC
0.9
6
6