IRFZ46ZLPBF International Rectifier, IRFZ46ZLPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ46ZLPBF
• Description: MOSFET N-CH 55V 51A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46ZLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1460pF @ 25V
• Power - Max: 82W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 51 A
• Power Dissipation: 82 W
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ46ZLPBF

Notes:

‚
ƒ
„
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
2
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
Pulse width
max. junction temperature. (See fig. 11).
R
recommended for use above this value.
T
Limited by T
V
SD
J
G
DSS
eff.
= 25 , I
175°C.
/ T
31A, di/dt
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.0ms; duty cycle
= 31A, V
= 25°C (unless otherwise specified)
, starting T
1070A/µs, V
Parameter
GS
Parameter
=10V. Part not
J
™
= 25°C, L =0.13mH,
DD
2%.
V
(BR)DSS
,
…
†
‡
ˆ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
45
C
as C
Limited by T
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
oss
oss
eff. is a fixed capacitance that gives the same charging time
0.053
1460
10.9
–––
–––
–––
–––
–––
–––
–––
250
130
860
190
310
–––
–––
–––
7.6
4.5
7.5
31
12
13
63
37
39
21
16
while V
Jmax
-200
13.6
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
4.0
1.3
20
46
11
18
51
31
24
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
is rising from 0 to 80% V
2
Pak, when mounted on 1" square PCB
V/°C
m
nC
nH
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 31A
= 31A
= 25°C, I
= 25°C, I
= 15
= V
= 25V, I
= 55V, V
= 55V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 28V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
f
f
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 31A, V
= 31A, V
= 31A
= 31A
= 0V to 44V
DSS
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
f
www.irf.com
.
f
D
= 1mA
DD
GS
J
G
= 125°C
= 28V
G
= 0V
f
S
D
D
S