IXTA18P10T IXYS, IXTA18P10T Datasheet - Page 4

• Manufacturer Part Number: IXTA18P10T
• Description: MOSFET P-CH 100V 18A TO-263
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTA18P10T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 2100pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): -100
• Id(cont), Tc=25°c, (a): -18
• Rds(on), Max, Tj=25°c, (?): 0.12
• Ciss, Typ, (pf): 2100
• Qg, Typ, (nc): 39
• Trr, Typ, (ns): 62
• Trr, Max, (ns): -
• Pd, (w): 83
• Rthjc, Max, (k/w): 1.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
-24
-20
-16
-12
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
10
-8
-4
-5
0
0
-3.0
-0.3
0
-0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-5
-3.5
f
= 1 MHz
-0.5
-10
-4.0
-0.6
Fig. 7. Input Admittance
Fig. 11. Capacitance
-15
-0.7
T
V
J
-4.5
DS
= 125ºC
V
C rss
V
SD
GS
- Volts
T
-0.8
J
-20
- Volts
- Volts
C oss
= 125ºC
- 40ºC
25ºC
-5.0
C iss
-0.9
-25
T
J
-1.0
= 25ºC
-5.5
-30
-1.1
-6.0
-35
-1.2
-6.5
-1.3
-40
-
-
-
100
0.1
-10
-
10
20
18
16
14
12
10
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
0
8
6
4
2
0
-
1
0
0
T
T
Single Pulse
V
I
I
R
-2
J
C
D
G
DS
DS(on)
= 150ºC
= 25ºC
= - 9A
= -1mA
5
= - 50V
Fig. 12. Forward-Bias Safe Operating Area
-4
Limit
10
-6
IXTY18P10T IXTA18P10T
Fig. 8. Transconductance
-
10
-8
Fig. 10. Gate Charge
15
Q
I
D
V
G
-10
DS
- Amperes
- NanoCoulombs
- Volts
-12
20
-14
25
-
100
-16
IXTP18P10T
T
J
25µs
100µs
1ms
10ms
100ms
= - 40ºC
125ºC
-18
30
25ºC
-20
35
-22
-
1000
-24
40