IRFU2607ZPBF International Rectifier, IRFU2607ZPBF Datasheet - Page 3

• Manufacturer Part Number: IRFU2607ZPBF
• Description: MOSFET N-CH 75V 42A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU2607ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1440pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 45A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 17.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +175°C
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.0
100.0
1000
Fig 3. Typical Transfer Characteristics
10.0
Fig 1. Typical Output Characteristics
100
0.1
1.0
0.1
10
1
0.1
2.0
TOP
BOTTOM
3.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 175°C
4.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
4.5V
5.0
V DS = 20V
60µs PULSE WIDTH
6.0
Tj = 25°C
60µs PULSE WIDTH
7.0
10
8.0
9.0
10.0
100
Fig 4. Typical Forward Transconductance
Fig 2. Typical Output Characteristics
1000
100
60
50
40
30
20
10
10
0
1
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
I D, Drain-to-Source Current (A)
Vs. Drain Current
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
V DS = 10V
380µs PULSE WIDTH
4.5V
20
Tj = 175°C
60µs PULSE WIDTH
10
T J = 175°C
T J = 25°C
30
3
100
40