IXTA88N085T IXYS, IXTA88N085T Datasheet

MOSFET N-CH 85V 88A TO-263

IXTA88N085T

Manufacturer Part Number
IXTA88N085T
Description
MOSFET N-CH 85V 88A TO-263
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTA88N085T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
3140pF @ 25V
Power - Max
230W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
88 A
Power Dissipation
230 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.0110
Ciss, Typ, (pf)
3140
Qg, Typ, (nc)
69
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
230
Rthjc, Max, (k/w)
0.65
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
LRMS
DM
D25
AR
GSS
DSS
L
J
JM
stg
SOLD
GS(th)
DSS
DGR
GSM
AS
D
DS(on)
d
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
≤ I
≤ 175° C, R
= 25° C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
TM
DSS
, I
D
D
D
= 250 µA
= 100 µA
G
= 25 A, Notes 1, 2
DS
= 5 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
J
≤ V
= 150° C
DSS
IXTA88N085T
IXTP88N085T
JM
Min.
2.0
85
Characteristic Values
-55 ... +175
-40 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
9
± 20
240
500
230
175
300
260
2.5
85
85
88
75
25
3
± 200
3
150
Max.
4.0
11
2
V/ns
m Ω
mJ
µA
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
g
g
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
TO-263 (IXTA)
V
I
R
DC/DC Converters and Off-line UPS
High Current Switching
D25
TO-220 (IXTP)
Systems
Applications
G = Gate
S = Source
Automotive
DSS
DS(on)
G
G
D
S
=
=
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
85
88
11 m Ω Ω Ω Ω Ω
(TAB)
DS99640 (11/06)
(TAB)
A
V

Related parts for IXTA88N085T

IXTA88N085T Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTA88N085T IXTP88N085T Maximum Ratings MΩ ± 240 JM 25 500 ≤ DSS 230 -55 ... +175 175 -40 ... +175 300 260 1. Nm/lb.in. 3 2.5 Characteristic Values Min. Typ. ...

Page 2

... Characteristic Values Min. Typ. Max. 240 JM 1.0 90 Kelvin test contact location must be DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA88N085T IXTP88N085T TO-263AA (IXTA) Outline Pins Gate 2 - Drain Source 4, TAB - Drain nC Dim. Millimeter Inches nC Min. Max. Min. ...

Page 3

... Value D 100 175º 25º -50 200 240 280 IXTA88N085T IXTP88N085T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized 44A Value DS(on) D vs. Junction Temperature V = 10V 88A 44A D -25 ...

Page 4

... T = -40º 25ºC 150º 5 1.1 1.2 1.3 1.4 1.00 0.10 0.01 0.0001 IXTA88N085T IXTP88N085T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 I - Amperes D Fig. 10. Gate Charge V = 43V 25A 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 ...

Page 5

... Switching Times vs. Junction Temperature 130 - - - - t d(off) 120 = 5 Ω 10V GS 54 110 = 44V 100 IXTA88N085T IXTP88N085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 10V 44V 125º Amperes D Fig. 16. Resistive Turn-off I = 20A 40A d(off Ω 10V 44V ...

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