STP12NK30Z STMicroelectronics, STP12NK30Z Datasheet

MOSFET N-CH 300V 9A TO-220

STP12NK30Z

Manufacturer Part Number
STP12NK30Z
Description
MOSFET N-CH 300V 9A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP12NK30Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
670pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
300V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
5.4 S
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7502-5
STP12NK30Z

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP12NK30Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP12NK30Z
Manufacturer:
ST
Quantity:
20 000
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDERING INFORMATION
December 2002
STP12NK30Z
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
IMPROVED ESD CAPABILITY
100% AVALANCHE RATED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
LIGHTING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
HIGH CURRENT, HIGH SPEED SWITCHING
TYPE
SALES TYPE
STP12NK30Z
DS
(on) = 0.36
300 V
V
DSS
Zener-Protected SuperMESH™Power MOSFET
R
< 0.4
DS(on)
P12NK30Z
MARKING
N-CHANNEL 300V - 0.36
I
D
9 A
(1)
Pw (1)
90 W
PACKAGE
TO-220
INTERNAL SCHEMATIC DIAGRAM
TO-220
STP12NK30Z
- 9A - TO-220
1
PACKAGING
2
3
TUBE
1/8

Related parts for STP12NK30Z

STP12NK30Z Summary of contents

Page 1

... MDmesh™ products. APPLICATIONS LIGHTING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC HIGH CURRENT, HIGH SPEED SWITCHING ORDERING INFORMATION SALES TYPE STP12NK30Z December 2002 N-CHANNEL 300V - 0.36 I ( INTERNAL SCHEMATIC DIAGRAM MARKING PACKAGE P12NK30Z TO-220 STP12NK30Z - 9A - TO-220 TO-220 PACKAGING TUBE 1/8 ...

Page 2

... STP12NK30Z ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous (1) Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (2) Peak Diode Recovery voltage slope T Storage Temperature ...

Page 3

... G GS (Resistive Load see, Figure 240V 10V GS Test Conditions di/dt = 100A/µ 40V 150° (see test circuit, Figure 5) STP12NK30Z Min. Typ. Max. 300 = 125 °C 50 ±10 3 3.75 4.5 0.36 0.4 Min. Typ. Max. 5 670 GS 125 28 70 3.6 Min. Typ. Max. ...

Page 4

... STP12NK30Z Safe Operating Area For TO-220 Output Characteristics Transconductance 4/8 Thermal Impedance For TO-220 Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STP12NK30Z 5/8 ...

Page 6

... STP12NK30Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STP12NK30Z inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C ...

Page 8

... STP12NK30Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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