IXTP152N085T IXYS, IXTP152N085T Datasheet - Page 4
![MOSFET N-CH 85V 152A TO-220](/photos/5/41/54169/328-to-220-3_sml.jpg)
IXTP152N085T
Manufacturer Part Number
IXTP152N085T
Description
MOSFET N-CH 85V 152A TO-220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet
1.IXTP152N085T.pdf
(5 pages)
Specifications of IXTP152N085T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
152A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
114nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Forward Transconductance Gfs (max / Min)
100 s
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
152 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
152
Rds(on), Max, Tj=25°c, (?)
0.0070
Ciss, Typ, (pf)
5500
Qg, Typ, (nc)
114
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTP152N085T
Manufacturer:
NIEC
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
280
240
200
160
120
270
240
210
180
150
120
100
80
40
90
60
30
0
0
0.4
3.5
0
f = 1 MHz
0.5
5
4
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
0.7
Intrinsic Diode
15
V
V
V
SD
GS
DS
T
0.8
5
J
- Volts
- Volts
= 150ºC
- Volts
20
C iss
C oss
C rss
0.9
5.5
25
T
J
= -40ºC
1
150ºC
25ºC
T
6
J
30
= 25ºC
1.1
6.5
35
1.2
1.3
40
7
1.00
0.10
0.01
140
120
100
10
80
60
40
20
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
10
D
G
DS
= 25A
= 10mA
= 43V
Fig. 12. Maximum Transient Thermal
20
0.001
40
Fig. 8. Transconductance
30
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
40
G
80
- NanoCoulombs
I
0.01
D
Impedance
50
- Amperes
T
J
= - 40ºC
150ºC
120
60
25ºC
IXTP152N085T
IXTA152N085T
70
0.1
160
80
90
1
100 110 120
200
10
240