STW14NK50Z STMicroelectronics, STW14NK50Z Datasheet - Page 6

• Manufacturer Part Number: STW14NK50Z
• Description: MOSFET N-CH 500V 14A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW14NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3258-5

Electrical characteristics
6/19
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
t
V
SDM
t
r(Voff)
I
d(off)
RRM
I
SD
Q
t
SD
t
t
t
c
f
f
rr
rr
(2)
(1)
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
STP14NK50Z - STP14NK50ZFP - STB14NK50Z - STB14NK50Z-1 -
V
R
(see Figure 19)
V
R
(see Figure 21)
I
I
di/dt = 100A/µs,
V
(see Figure 21)
DD
DD
SD
SD
G
G
DD
=4.7Ω, V
=4.7Ω, V
=250V, I
=400 V, I
=12A, V
=12A,
Test conditions
=35V, Tj=150°C
GS
D
GS
GS
D
=6A,
=12A,
=0
=10V
=10V
Min
Typ.
13.2
470
3.1
9.5
54
12
20
9
Max
1.6
12
48
Unit
µC
ns
ns
ns
ns
ns
ns
A
A
V
A