IRFB4310ZPBF International Rectifier, IRFB4310ZPBF Datasheet
IRFB4310ZPBF
Manufacturer Part Number
IRFB4310ZPBF
Description
MOSFET N-CH 100V 120A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB4310ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 150µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6860pF @ 50V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
120 A
Gate Charge, Total
120 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
250 W
Resistance, Drain To Source On
4.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
55 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
150 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
127 A
Mounting Style
Through Hole
Gate Charge Qg
120 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB4310ZPBF
Manufacturer:
IR
Quantity:
20 000
Applications
l
l
l
l
Benefits
l
l
l
l
Absolute Maximum Ratings
I
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy e
Avalanche Current c
Repetitive Avalanche Energy g
Junction-to-Case k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 k
Junction-to-Ambient (PCB Mount) , D
Parameter
Parameter
GS
GS
GS
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Wire Bond Limited)
2
Pak jk
G
D
IRFB4310ZPbF
TO-220AB
G ate
G
G
D
S
D
S
See Fig. 14, 15, 22a, 22b,
Typ.
0.50
–––
–––
–––
V
R
I
I
D
D
10lbxin (1.1Nxm)
DSS
DS(on)
-55 to + 175
(Silicon Limited)
(Package Limited)
IRFS4310ZPbF
D
Drain
127c
Max.
90c
HEXFET Power MOSFET
120
560
250
± 20
300
130
1.7
18
D
D
IRFSL4310ZPbF
2
Pak
G
IRFB4310ZPbF
IRFS4310ZPbF
typ.
D
max.
S
Max.
–––
0.6
62
40
IRFSL4310ZPbF
D
Source
127A c
4.8m :
6.0m :
TO-262
120A
100V
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
G
D
1
S
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IRFB4310ZPBF Summary of contents
Page 1
... Case-to-Sink, Flat Greased Surface , TO-220 θCS R Junction-to-Ambient, TO-220 k θJA R Junction-to-Ambient (PCB Mount θ TO-220AB IRFB4310ZPbF G ate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Wire Bond Limited) GS Parameter 2 Pak jk IRFB4310ZPbF IRFS4310ZPbF IRFSL4310ZPbF HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited) I (Package Limited ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
Page 3
EXAMPLE: T HIS IS AN IRF 1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead - Free" TO-220AB packages ...