IXTH180N085T IXYS, IXTH180N085T Datasheet - Page 4

• Manufacturer Part Number: IXTH180N085T
• Description: MOSFET N-CH 85V 180A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH180N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 430W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 180 A
• Power Dissipation: 430 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 180
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 170
• Trr, Typ, (ns): 63
• Trr, Max, (ns): -
• Pd, (w): 430
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
240
200
160
120
270
240
210
180
150
120
100
80
40
90
60
30
0
0
3.5
0.4
0
f = 1 MHz
0.5
5
Fig. 9. Forward Voltage Drop of
4
0.6
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
0.7
Intrinsic Diode
15
V
V
V
DS
GS
T
SD
J
0.8
= 150ºC
- Volts
- Volts
- Volts
20
5
C iss
C oss
C rss
0.9
25
5.5
1
T
J
T
= -40ºC
J
30
125ºC
= 25ºC
25ºC
1.1
6
35
1.2
40
1.3
6.5
180
160
140
120
100
1.00
0.10
0.01
80
60
40
20
10
0
9
8
7
6
5
4
3
2
1
0
0.0001
0
0
V
I
I
D
G
DS
20
= 25A
= 10mA
= 43V
Fig. 12. Maximum Transient Thermal
40
0.001
40
Fig. 8. Transconductance
Q
Fig. 10. Gate Charge
Pulse Width - Seconds
80
G
60
I
- NanoCoulombs
D
0.01
- Amperes
Impedance
T
80
J
= - 40ºC
120
150ºC
25ºC
IXTQ180N085T
100
IXTH180N085T
0.1
160
120
140
1
200
160
240
10
180