STW34NB20 STMicroelectronics, STW34NB20 Datasheet - Page 7

• Manufacturer Part Number: STW34NB20
• Description: MOSFET N-CH 200V 34A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW34NB20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 75 mOhm @ 17A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 180000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Current, Drain: 34 A
• Gate Charge, Total: 60 nC
• Package Type: TO-247
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.062 Ohm
• Temperature, Operating, Maximum: +150 °C
• Time, Turn-off Delay: 17 ns
• Time, Turn-on Delay: 30 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2659-5

Figure 14. Unclamped Inductive Load Test
Circuit
Figure 16. Switching Times Test Circuits For
Resistive Load
Figure 18. Test Circuit For Inductive Load
Switching And Diode Recovery Times
Figure 15. Unclamped Inductive Waveforms
Figure 17. Gate Charge Test Circuit
STW34NB20
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