IXFH22N50P IXYS, IXFH22N50P Datasheet - Page 5
IXFH22N50P
Manufacturer Part Number
IXFH22N50P
Description
MOSFET N-CH 500V 22A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXFV22N50P.pdf
(5 pages)
Specifications of IXFH22N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2630pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
350000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
22
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
2880
Qg, Typ, (nc)
50
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
350
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH22N50P
Manufacturer:
ON
Quantity:
30 000
IXFH 22N50P IXFV 22N50P
IXFV 22N50PS
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
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