IXTA6N50D2 IXYS, IXTA6N50D2 Datasheet - Page 3
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IXTA6N50D2
Manufacturer Part Number
IXTA6N50D2
Description
MOSFET N-CH 500V 6A D2PAK
Manufacturer
IXYS
Datasheet
1.IXTH6N50D2.pdf
(5 pages)
Specifications of IXTA6N50D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
500 mOhm @ 3A, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Gate Charge (qg) @ Vgs
96nC @ 5V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vds, Max, (v)
500
Id(on), Min, (a)
6
Rds(on), Max, (?)
0.5
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
2800
Crss, Typ, (pf)
64
Qg, Typ, (nc)
96
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.41
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTA6N50D2
Manufacturer:
IXYS
Quantity:
1 200
© 2009 IXYS CORPORATION, All Rights Reserved
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0.0
0
0
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
100
0.5
1
Fig. 5. Drain Current @ T
200
1.0
V
2
V
V
DS
DS
DS
- Volts
- Volts
V
- Volts
GS
300
= 5V
3V
2V
1V
V
1.5
GS
3
-2V
-1V
0V
= 5V
400
2V
1V
J
= 100ºC
-1V
-2V
J
0V
J
= 125ºC
= 25ºC
2.0
V
4
GS
500
= -2.50V
-2.75V
-3.75V
-4.00V
-3.00V
-3.25V
-3.50V
600
2.5
5
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
40
35
30
25
20
15
10
5
0
-4.2
0
0
Fig. 2. Extended Output Characteristics @ T
Fig. 6. Dynamic Output Resistance vs. Gate Voltage
-4.0
100
5
-3.8
Fig. 4. Drain Current @ T
IXTA6N50D2 IXTP6N50D2
-3.6
T
J
200
10
= 100ºC
-3.4
V
V
DS
DS
V
-3.2
GS
- Volts
- Volts
300
V
15
- Volts
GS
-3.0
T
= 5V
J
4V
3V
-1V
-2V
2V
1V
= 25ºC
0V
-2.8
400
IXTH6N50D2
20
J
= 25ºC
∆
V
-2.6
DS
= 350V - 100V
V
GS
-2.4
J
500
25
= - 2.25V
= 25ºC
- 2.50V
- 2.75V
- 3.00V
- 3.25V
- 3.50V
- 3.75V
-2.2
-2.0
600
30