IXTC160N10T IXYS, IXTC160N10T Datasheet

MOSFET N-CH 100V 83A ISOPLUS220

IXTC160N10T

Manufacturer Part Number
IXTC160N10T
Description
MOSFET N-CH 100V 83A ISOPLUS220
Manufacturer
IXYS
Series
TrenchMV™r
Datasheet

Specifications of IXTC160N10T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
83A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
132nC @ 10V
Input Capacitance (ciss) @ Vds
6600pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0075 Ohms
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
83 A
Power Dissipation
140 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
83
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
6600
Qg, Typ, (nc)
132
Trr, Typ, (ns)
60
Trr, Max, (ns)
-
Pd, (w)
140
Rthjc, Max, (k/w)
1.06
Package Style
ISOPLUS220™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
DM
D25
L
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
C
GS(th)
DSS
GSM
AS
ISOL
DS(on)
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Package Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, t = 1 minute, I
Mounting force
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
D
= 250 μA
= 250 μA
= 25 A, Notes 1, 2
G
DS
= 5 Ω
= 0 V
GS
ISOL
Preliminary Technical Information
= 1 MΩ
DD
< 1 mA, RMS
T
≤ V
J
IXTC160N10T
= 150°C
DSS
JM
100
Min.
2.5
11..65/2.5..15
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
Typ.
6.5
2500
± 20
100
100
430
140
300
260
500
175
83
75
25
3
2
± 200 nA
Max.
250 μA
4.5
7.5 mΩ
5 μA
N/lb.
V/ns
mJ
°C
°C
°C
°C
°C
W
V
A
V
V
V
V
V
A
A
A
g
ISOPLUS220 (IXTC)
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
G = Gate
S = Source
Easy to mount
Space savings
High power density
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Electronic Valve Train Systems
V
I
R
High Current Switching
High Voltage Synchronous Recifier
Distributed Power Architechtures
Systems
D25
Applications
DSS
DS(on)
and VRMs
E153432
G
D
S
= 100
=
≤ ≤ ≤ ≤ ≤
Isolated back
D = Drain
7.5 mΩ Ω Ω Ω Ω
83
DS99677(11/06)
surface
A
V

Related parts for IXTC160N10T

IXTC160N10T Summary of contents

Page 1

... GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTC160N10T Maximum Ratings 100 = 1 MΩ 100 GS ± 430 JM 25 500 ≤ DSS 140 -55 ... +175 175 -55 ... +175 300 260 < 1 mA, RMS 2500 ISOL 11..65/2.5..15 Characteristic Values Min ...

Page 2

... J Min. Typ The Technical Specifications 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTC160N10T ISOPLUS220 (IXTC) Outline Max 1.Gate ns 3.Sourc Note: Bottom heatsink (Pin electrically isolated from Pins 1,2, and 1.06°C/W ° ...

Page 3

... Fig Normalized to I DS(on) vs. Junction Temperature 2 10V 2.6 GS 2.4 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature 90 External Lead Current Limit -50 - Degrees Centigrade C IXTC160N10T 160A Value D = 160A 80A D 100 125 150 175 100 125 150 175 ...

Page 4

... T = 25º 1.1 1.2 1.3 1.4 10.00 C iss 1.00 C oss 0.10 C rss 0. 0.0001 IXTC160N10T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 140 I - Amperes D Fig. 10. Gate Charge V = 50V 25A 10mA NanoCoulombs G Fig. 12. Maxim um Transient Therm al Im pedance 0.001 ...

Page 5

... I = 25A 140 - - - - d(off) 77 130 = 5 Ω 10V 120 V = 50V DS 71 110 68 100 25º IXTC160N10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Ω 10V 50V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off Ω 50V 25A 50A 25A 50A Degrees Centigrade J Fig ...

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