IXFV22N60PS IXYS, IXFV22N60PS Datasheet - Page 4

• Manufacturer Part Number: IXFV22N60PS
• Description: MOSFET N-CH 600V 22A PLUS220-SMD
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFV22N60PS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohms
• Forward Transconductance Gfs (max / Min): 20 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 23 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 20 ns
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 3600
• Qg, Typ, (nc): 58
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.31
• Package Style: PLUS220 SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
30
27
24
21
18
15
12
70
60
50
40
30
20
10
10
9
6
3
0
0
4.5
0.4
0
T
J
0.5
f = 1MH z
5
5
= 125
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
-40
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
25
T
10
J
º
º
º
5.5
0.6
= 125
C
C
C
V
V
15
V
º
G S
S D
C
0.7
D S
6
- V olts
- V olts
20
- V olts
6.5
0.8
25
T
J
0.9
= 25
7
30
C iss
C oss
C rs s
º
C
7.5
1
35
1.1
40
8
100
10
30
27
24
21
18
15
12
10
1
9
6
3
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
J
T
T
V
I
I
D
G
= -40
J
C
R
DS
125
3
= 11A
= 10m A
= 150ºC
DS(on)
IXFH 22N60P IXFV22N60P
25
= 25ºC
Fig. 8. Trans conductance
10
= 300V
º
º
º
C
C
6
C
Fig. 10. Gate Char ge
Fig. 12. For w ard-Bias
Safe Ope rating Are a
Lim it
Q
9
20
G
IXFV 22N60PS
I
- nanoCoulombs
V
12
D
D S
- A mperes
D C
100
15
30
- V olts
18
10m s
40
21
1m s
24
50
27
100µs
25µs
1000
30
60