IXTV250N075T IXYS, IXTV250N075T Datasheet - Page 5

• Manufacturer Part Number: IXTV250N075T
• Description: MOSFET N-CH 75V 250A PLUS220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTV250N075T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 250A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 550W
• Mounting Type: Through Hole
• Package / Case: PLUS-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 250 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 250
• Rds(on), Max, Tj=25°c, (?): 0.0040
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): 80
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: PLUS220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
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100
56
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50
48
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36
80
60
40
20
53
50
47
44
41
38
35
32
29
26
23
20
0
24 26 28 30 32 34 36
25
2
t
T
V
Switching Times vs. Gate Resistance
I
r
J
DS
t
R
V
Switching Times vs. Drain Current
D
35
= 125ºC, V
4
f
G
DS
Rise Time vs. Junction Temperature
= 25A
= 37.5V
= 3.3 Ω , V
= 37.5V
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
45
6
t
d(on)
Fig. 13. Resistive Turn-on
t
d(off)
GS
GS
I
I
55
T
8
- - - -
D
D
= 10V
J
R
- - - -
= 10V
T
- Amperes
= 50A
- Degrees Centigrade
G
J
= 25ºC, 125ºC
10
- Ohms
65
38 40 42 44 46 48 50
I
12
D
75
= 50A, 25A
14
85
16
95
R
V
V
G
GS
DS
18
105
= 3.3 Ω
= 37.5V
= 10V
20
115
85
80
75
70
65
60
55
50
45
40
35
100
95
90
85
80
75
70
65
60
55
50
125
240
220
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180
160
140
120
100
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52
51
50
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46
45
44
43
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41
40
80
60
40
20
55
50
45
40
35
30
25
20
25
24
Switching Times vs. Junction Temperature
2
t
R
V
Switching Times vs. Gate Resistance
t
T
V
f
35
26
G
DS
f
J
DS
R
V
V
4
= 125ºC, V
= 3.3 Ω , V
G
GS
DS
= 37.5V
= 37.5V
= 3.3 Ω
28
45
= 37.5V
= 10V
Fig. 16. Resistive Turn-off
Fig. 18. Resistive Turn-off
T
6
t
Rise Time vs. Drain Current
J
30
d(off)
t
d(off)
Fig. 14. Resistive Turn-on
- Degrees Centigrade
55
GS
GS
8
- - - -
= 10V
32
- - - -
R
= 10V
65
G
I
I
D
D
10
- Ohms
34
= 50A
- Amperes
75
36
12
I
D
IXTV250N075TS
85
IXYS REF: T_250N075T (6V) 8-31-08-A.xls
= 25A
38
I
IXTV250N075T
D
14
= 25A
T
T
95
40
I
J
J
D
= 25ºC
= 125ºC
= 50A
16
42
105 115
44
18
46
20
125
390
360
330
300
270
240
210
180
150
120
90
60
48
102
98
94
90
86
82
78
74
70
66
62
58
54
50
50