IXTV200N10TS IXYS, IXTV200N10TS Datasheet - Page 2

• Manufacturer Part Number: IXTV200N10TS
• Description: MOSFET N-CH 100V 200A PLUS220SMD
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTV200N10TS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 200A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 550W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 200 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 200
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 9400
• Qg, Typ, (nc): 152
• Trr, Typ, (ns): 76
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: PLUS220 SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes: 1.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
S
SM
RM
d(on)
r
d(off)
f
IXYS reserves the right to change limits, test conditions, and dimensions.
rr
fs
SD
oss
thJC
thCH
iss
rss
g(on)
gs
gd
RM
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
2. On through-hole packages, R
location must be 5mm or less from the package body.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Repetitive, Pulse width limited by T
I
V
PLUS220
V
Resistive Switching Times
V
R
V
I
V
F
Test Conditions
Test Conditions
V
F
GS
DS
GS
GS
R
G
= 50A, V
GS
= 100A, V
= 50V
= 0V, V
= 3.3Ω (External)
= 10V, V
= 10V, I
= 10V, V
= 0V
GS
DS
GS
D
DS
= 0V, Note 1
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V,-di/dt = 100A/μs
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 50A
= 50A
Kelvin test contact
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
60
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
1087
Typ.
9400
0.21
205
140
152
5.4
76
96
45
34
35
31
47
47
0.27 °C/W
Max.
Max.
200
500
1.0
6,404,065 B1
6,534,343
6,583,505
°C/W
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS220SMD (IXTV_S) Outline
PLUS220 (IXTV) Outline
6,727,585
6,771,478 B2 7,071,537
IXTV200N10T
IXTV200N10TS
7,005,734 B2
7,063,975 B2
7,157,338B2